t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 1 of 7 2n3501ub compliant radiation hardened npn silicon switching transistor qualified per mil - prf - 19500/3 66 qualified levels : jan , jantx, jantxv and jans description this 2n3501 epitaxial p lanar transistor is military qualified up to a jans level for high - reliability applications. th is device is also available in thru hole to - 5 and to - 39 packaging as well as a low profile u4 surface mount . microsemi also offers numerous other transistor pr oducts to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. ub package also available in : to - 5 package (long - leaded) 2n3498l ? 2n3501l to - 39 (to - 205ad) package (leaded) 2n3498 ? 2n3501 u4 package (surface mount) 2n3498u4 ? 2n3501 u4 important: for the latest informatio n, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 2n350 1 number . ? jan, jantx, jantxv and jans qualifications are available per mil - prf - 19500/366. (see part nomenclature for all available options.) ? rohs compliant by design . applications / benefits ? gene ral purpose transistors for medium power applications requiring high frequency switching. ? low profile ceramic package. ? lightweight. ? military and other high - reliability applications. maximum ratings @ t c = +25 oc unless otherwise noted msc ? lawrence 6 l ake street, lawrence, ma 01841 tel: 1 -800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. c lare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit junction & storage temperature range t j , t stg - 65 to +200 c thermal resistance junction -to - ambient r ? ja 325 o c/w thermal resistance junction -to - solder pad r ? jsp 90 o c/w collector - emitter voltage v ceo 150 v collector - base voltage v cbo 150 v emitter - base voltage v ebo 6.0 v collector current i c 300 ma total power dissipation @ t a = +25 c (1) @ t sp = + 25 c (2) p t 0.5 1.5 w notes : 1. see figure 1 . 2. see figure 2 .
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 2 of 7 2n3501ub mechanical and packaging ? case: ceramic . ? terminals: gold p lating over n ickel under plate. ? marking: part number, date co de, manufacturer?s id. ? tape & reel option: standard per eia - 418d . consult factory for quantities. ? weight: < 0.04 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n3501 ub reliability lev el jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characteristics table) surface mount package symbols & definitions symbo l definition c obo c ommon - base open - circuit output capacitance i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo e mitter cutoff current, collector open h fe c ommon - emitter static forward curren t transfer ratio v ceo c ollector - emitter voltage, base open v cbo c ollector - emitter voltage, emitter open v ebo e mitter - base voltage, collector open
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 3 of 7 2n3501ub electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbo l min. max. unit off characteristics collector - emitter breakdown voltage i c = 10 ma , pulsed v (br)ceo 150 v collector - base cutoff current v cb = 75 v v cb = 150 v i cbo 50 10 n a a emitter - base cutoff current v eb = 4.0 v v eb = 6.0 v i ebo 25 10 n a a on characteristics (1 ) forward - current transfer ratio i c = 0.1 ma, v ce = 10 v i c = 1.0 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 150 ma, v ce = 10 v i c = 300 ma, v ce = 10 v h fe 35 50 75 100 20 300 collector - emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 150 ma, i b = 15 ma v ce(sat) 0.2 0.4 v base - emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 150 ma, i b = 15 ma v be(sat) 0.8 1.2 v dynamic characteristics forward current transfer ratio, magnitude i c = 20 ma, v ce = 20 v, f = 100 mhz |h fe | 1.5 8.0 output capacitance v cb = 10 v, i e = 0, 100 khz < f < 1.0 mhz c obo 8.0 pf input capacitance v eb = 0.5 v, i c = 0, 100 khz < f < 1.0 mhz c ibo 80 pf (1 ) pulse test: p ulse w idth = 300 s , d ut y c ycl e < 2.0%.
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 4 of 7 2n3501ub electrical characteristics @ t a = +25 c, unless otherwise noted (continued) switching characteristics parameters / test conditions symbol min. max. unit turn - on time v eb = 5 v; i c = 150 ma; i b1 = 15 ma t on 115 n s turn - off time i c = 150 ma; i b1 = i b2 = 15 ma t off 1150 n s safe operating area (see soa figure and reference mil - std - 750 method 3053 ) dc tests t c = +25 o c, tr > 10 n s; 1 cycle , t = 1.0 s test 1 v ce = 10 v, i c = 113 ma test 2 v ce = 50 v, i c = 23 ma test 3 v ce = 80 v, i c = 1 4 ma clamped switching t a = +25 o c test 1 i b = 50 ma, i c = 300 ma collector to emitter voltage v ce (volts) maximum s afe o perating a rea collector current i c (milliamperes)
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 5 of 7 2n3501ub graphs tc (c) (case) figure 1 derating for all devices (r jsp ) h tc (c) (case) figure 2 dera ting for all devices (r ja ) dc operation maximum rating (w) dc operation maximum rating (w)
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 6 of 7 2n3501ub graphs time (s) figure 3 thermal impedance graph (r jsp ) theta ( o c/w)
t4 - lds -0 276-3 , rev . 1 (12 1564 ) ?201 2 microsemi corporation page 7 of 7 2n3501ub package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh .046 .056 1.17 1.42 ls 1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl - .128 - 3.25 r - .008 - 0.20 3 cw - .108 - 2.74 r 1 - .012 - 0.305 ll 1 .022 .038 0.56 0.97 r 2 - .022 - 0.559 ll 2 .017 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metallized areas. 4. lid material: kovar. 5 . pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 6 . in accordance with asme y14.5m, diameters are equivalent to x symbology. lid
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